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SQJ454EP-T1_GE3 - Vishay

Description: MOSFET 200V Vds PowerPAK AEC-Q101 Qualified

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PCB Footprints
SQJ454EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8L Single_2022
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3D Models
SQJ454EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK SO-8L Single_2022
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SQJ454EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ454EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    11.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    68 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    35 ns

SQJ454EP-T1_GE3 Frequently Asked Questions (FAQs)

  • Store the components in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C.
  • Yes, the SQJ454EP-T1_GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
  • Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 30s, and time above 183°C 90s. Avoid excessive thermal stress and mechanical stress during soldering.
  • Yes, the SQJ454EP-T1_GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
  • The maximum operating voltage for SQJ454EP-T1_GE3 is 50 VDC. Exceeding this voltage may reduce the component's lifespan or cause damage.

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SQJ454EP-T1_GE3 Overview

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Part Image SQJ454EP-T1_BE3 Vishay Intertechnologies

Power Field-Effect Transistor, 13A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET