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SQJ479EP-T1_NE3 - Vishay

Description: MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET

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SQJ479EP-T1_NE3 Details

  • Manufacturer Part Number:

    SQJ479EP-T1_NE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    300 pF

  • JESD-30 Code:

    R-PSSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Pure Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    90 ns

  • Turn-on Time-Max (ton):

    35 ns

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SQJ479EP-T1_NE3 Overview

Use the download button to access the SQJ479EP-T1_NE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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