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SQJ481EP-T1_GE3 - Vishay

Description: MOSFET -80V Vds; +/-20V Vgs PowerPAK SO-8L

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SQJ481EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8L Single-1
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SQJ481EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK SO-8L Single-1
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SQJ481EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ481EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    30 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    30 ns

SQJ481EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQJ481EP-T1_GE3 is -40°C to 125°C.
  • Yes, SQJ481EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The thermal resistance of SQJ481EP-T1_GE3 is typically around 10°C/W, but this can vary depending on the specific application and mounting method.
  • Yes, SQJ481EP-T1_GE3 is designed for high-reliability applications, including aerospace, defense, and industrial control systems.
  • The maximum operating voltage for SQJ481EP-T1_GE3 is 1000V, but this can vary depending on the specific application and environmental conditions.

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SQJ481EP-T1_GE3 Overview

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Part Image SQJ481EP Vishay Intertechnologies

Power Field-Effect Transistor, 16A I(D), 80V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET