Part Image

SQJ951EP-T1_GE3 - Vishay

Description: MOSFET Dual P-Channel 30V AEC-Q101 Qualified

Download SQJ951EP-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQJ951EP-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8L DUAL
click to zoom
3D Models
SQJ951EP-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8L DUAL
click to zoom

SQJ951EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ951EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    36.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    305 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    56 W

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    101 ns

  • Turn-on Time-Max (ton):

    36 ns

SQJ951EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQJ951EP-T1_GE3 is -40°C to 125°C.
  • Yes, SQJ951EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The maximum power dissipation for SQJ951EP-T1_GE3 is 1.5 W at 25°C ambient temperature.
  • Yes, SQJ951EP-T1_GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The typical junction-to-ambient thermal resistance for SQJ951EP-T1_GE3 is 125°C/W.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQJ951EP-T1_GE3 Overview

Use the download button to access the SQJ951EP-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJ95, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQJ951EP-T1_GE3

Showing 0 results