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SQJ963EP-T1_GE3 - Vishay

Description: MOSFET -60V -8A 27W AEC-Q101 Qualified

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SQJ963EP-T1_GE3 - Vishay PCB footprint - Other - Other - SQJ963EP-T1_GE3-1
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SQJ963EP-T1_GE3 - Vishay  - 3D model - Other - SQJ963EP-T1_GE3-1
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SQJ963EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJ963EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    8 A

  • Drain-source On Resistance-Max:

    0.085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQJ963EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage temperature for SQJ963EP-T1_GE3 is -40°C to 125°C.
  • Yes, SQJ963EP-T1_GE3 is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.
  • The maximum power dissipation for SQJ963EP-T1_GE3 is 1.5 W at 25°C ambient temperature.
  • Yes, SQJ963EP-T1_GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications.
  • The typical junction-to-ambient thermal resistance for SQJ963EP-T1_GE3 is 125°C/W.

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