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SQJB70EP-T1_GE3 - Vishay

Description: MOSFET Dual N-Ch 100V AEC-Q101 Qualified

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SQJB70EP-T1_GE3 Details

  • Manufacturer Part Number:

    SQJB70EP-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.75

  • Avalanche Energy Rating (Eas):

    5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    11.3 A

  • Drain-source On Resistance-Max:

    0.095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    35 ns

  • Turn-on Time-Max (ton):

    25 ns

SQJB70EP-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJB70EP-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for the SQJB70EP-T1_GE3 is 80% of the maximum rated voltage, which is 700 V. Therefore, the maximum allowed voltage derating is 560 V.
  • Yes, the SQJB70EP-T1_GE3 is suitable for high-frequency applications up to 100 kHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within its specified ratings. Also, consider using a redundant design, and perform thorough testing and validation of the circuit.

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SQJB70EP-T1_GE3 Overview

Use the download button to access the SQJB70EP-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJB7, or try a keyword search, such as Power Field-Effect Transistors

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