SQJQ112E-T1_GE3 - Vishay

SQJQ112E-T1_GE3 Details

• Manufacturer Part Number:

  SQJQ112E-T1_GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Factory Lead Time:

  25 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  5.9

• Avalanche Energy Rating (Eas):

  242 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  296 A

• Drain-source On Resistance-Max:

  0.00253 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  112 pF

• JESD-30 Code:

  R-PSSO-G4

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  600 W

• Pulsed Drain Current-Max (IDM):

  655 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  119 ns

• Turn-on Time-Max (ton):

  54 ns