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SQJQ112ER-T1_GE3 - Vishay

Description: MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET

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PCB Footprints
SQJQ112ER-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 8 x 8LR BWL
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3D Models
SQJQ112ER-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® 8 x 8LR BWL
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SQJQ112ER-T1_GE3 Details

  • Manufacturer Part Number:

    SQJQ112ER-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    242 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    296 A

  • Drain-source On Resistance-Max:

    0.00253 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    112 pF

  • JESD-30 Code:

    R-PDSO-G5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Pulsed Drain Current-Max (IDM):

    655 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    119 ns

  • Turn-on Time-Max (ton):

    54 ns

SQJQ112ER-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJQ112ER-T1_GE3 is a standard 1206 package with a land pattern of 1.7mm x 0.8mm, with a non-solder mask defined (NSMD) pad to ensure proper soldering and thermal performance.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal management, and consider using a thermally conductive pad or heat sink to dissipate heat. Additionally, consult Vishay's application notes and reliability reports for specific guidance.
  • While the SQJQ112ER-T1_GE3 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 MHz with proper PCB design and layout considerations. However, it's essential to evaluate the component's performance and potential parasitic effects in your specific application.
  • The maximum allowable voltage derating for the SQJQ112ER-T1_GE3 is typically 80% of the rated voltage, but this may vary depending on the specific application and operating conditions. Consult Vishay's application notes and datasheet for specific guidance on voltage derating.
  • The SQJQ112ER-T1_GE3 is a moisture-sensitive device (MSD) and requires proper storage and handling to prevent damage. Store the components in a dry, nitrogen-filled environment, and follow Vishay's recommended handling and baking procedures to minimize moisture absorption.

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SQJQ112ER-T1_GE3 Overview

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