Part Image

SQJQ140E-T1_GE3 - Vishay

Description: MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET

Download SQJQ140E-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQJQ140E-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® 8 x 8LR BWL
click to zoom
3D Models
SQJQ140E-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® 8 x 8LR BWL
click to zoom

SQJQ140E-T1_GE3 Details

  • Manufacturer Part Number:

    SQJQ140E-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    312 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    701 A

  • Drain-source On Resistance-Max:

    0.00053 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    432 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Pulsed Drain Current-Max (IDM):

    1820 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    141 ns

  • Turn-on Time-Max (ton):

    156 ns

SQJQ140E-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQJQ140E-T1_GE3 is a rectangular pad with a size of 1.6 mm x 0.8 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or a thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for the SQJQ140E-T1_GE3 is 80% of the rated voltage, which is 140 V. Therefore, the maximum allowed voltage derating is 112 V.
  • Yes, the SQJQ140E-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit.
  • To ensure reliability, follow the recommended storage and handling procedures, and ensure that the device is operated within its specified ratings. Also, consider using a redundant design, and perform thorough testing and validation of the device in the application.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQJQ140E-T1_GE3 Overview

Use the download button to access the SQJQ140E-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJQ1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQJQ140E-T1_GE3

Showing 0 results