Part Image

SQJQ960EL-T1_GE3 - Vishay

Description: MOSFET 2N-CH 60V 63A PPAK8X8

Download SQJQ960EL-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
SQJQ960EL-T1_GE3 - Vishay  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

SQJQ960EL-T1_GE3 Details

  • Manufacturer Part Number:

    SQJQ960EL-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    34 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    63 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    108 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    71 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    33 ns

  • Turn-on Time-Max (ton):

    19 ns

SQJQ960EL-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SQJQ960EL-T1_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • To prevent electrostatic discharge (ESD) damage, handle SQJQ960EL-T1_GE3 with an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded.
  • The maximum power dissipation for SQJQ960EL-T1_GE3 is 1.5 W, and it is recommended to derate the power dissipation based on the ambient temperature.
  • Yes, SQJQ960EL-T1_GE3 is suitable for high-reliability applications, such as aerospace, defense, and medical devices, due to its high-quality construction and rigorous testing.
  • To solder SQJQ960EL-T1_GE3, use a soldering iron with a temperature of 250°C to 260°C, and ensure that the soldering time is less than 3 seconds to prevent thermal damage.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

SQJQ960EL-T1_GE3 Overview

Use the download button to access the SQJQ960EL-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJQ9, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQJQ960EL-T1_GE3

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview