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SQJQ980EL-T1_GE3 - Vishay

Description: MOSFET 80V Vds Dual N-Ch AEC-Q101 Qualified

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SQJQ980EL-T1_GE3 Details

  • Manufacturer Part Number:

    SQJQ980EL-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    2

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Pulsed Drain Current-Max (IDM):

    128 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    32 ns

  • Turn-on Time-Max (ton):

    19 ns

SQJQ980EL-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQJQ980EL-T1_GE3 is a rectangle with dimensions 2.5 mm x 1.3 mm, with a pad size of 1.5 mm x 0.8 mm and a spacing of 0.5 mm between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowed voltage derating for SQJQ980EL-T1_GE3 is 80% of the rated voltage, which is 980 V. Therefore, the maximum allowed voltage derating is 784 V.
  • Yes, SQJQ980EL-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance, as well as the PCB layout, to minimize high-frequency losses.
  • To ensure reliability in a humid environment, follow proper storage and handling procedures, and consider using a conformal coating or potting compound to protect the device from moisture. Also, ensure the device is operated within the recommended temperature and humidity ranges.

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SQJQ980EL-T1_GE3 Overview

Use the download button to access the SQJQ980EL-T1_GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SQJQ9, or try a keyword search, such as Power Field-Effect Transistors

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