SQM50N04-4m1_GE3 - Vishay

SQM50N04-4m1_GE3 Details

• Manufacturer Part Number:

  SQM50N04-4M1_GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• Package Description:

  TO-263, D2PAK-3/2

• ECCN Code:

  EAR99

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  180 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  50 A

• Drain-source On Resistance-Max:

  0.0041 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-263AB

• JESD-30 Code:

  R-PSSO-G2

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  200 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  SINGLE

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Element Material:

  SILICON