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SQM50P03-07_GE3 - Vishay

Description: MOSFET P-Channel 30V AEC-Q101 Qualified Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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PCB Footprints
SQM50P03-07_GE3 - Vishay PCB footprint - Other - Other - TO-263 (D2PAK): 3-LEAD_2020
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3D Models
SQM50P03-07_GE3 - Vishay  - 3D model - Other - TO-263 (D2PAK): 3-LEAD_2020
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SQM50P03-07_GE3 Details

  • Manufacturer Part Number:

    SQM50P03-07_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

SQM50P03-07_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQM50P03-07_GE3 is a rectangle with dimensions 2.5mm x 1.5mm, with a thermal pad of 2.1mm x 1.1mm. The pad should be connected to a large copper area to ensure good thermal dissipation.
  • Yes, SQM50P03-07_GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout, to minimize losses and ensure reliable operation.
  • To ensure the reliability of SQM50P03-07_GE3 in a high-temperature environment, it's crucial to follow the recommended derating curves, ensure good thermal dissipation, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum allowed voltage transient for SQM50P03-07_GE3 is 50 V for a duration of 100 ns. Exceeding this limit may cause damage to the device. It's essential to ensure that the device is protected from voltage transients and spikes in the application.
  • Yes, SQM50P03-07_GE3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.

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SQM50P03-07_GE3 Overview

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