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SQM50P06-15L_GE3 - Vishay

Description: MOSFET P-Channel 60V AEC-Q101 Qualified

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SQM50P06-15L_GE3 - Vishay PCB footprint - Other - Other - SQM50P06-15L_GE3-1
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SQM50P06-15L_GE3 - Vishay  - 3D model - Other - SQM50P06-15L_GE3-1
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SQM50P06-15L_GE3 Details

  • Manufacturer Part Number:

    SQM50P06-15L_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

SQM50P06-15L_GE3 Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for SQM50P06-15L_GE3 can be found in the Vishay Intertechnologies' application note AN806, which provides guidelines for PCB layout and assembly.
  • To ensure reliability in high-temperature applications, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a thermal interface material to improve heat dissipation. Additionally, ensuring good airflow and using a heat sink can also help to reduce the junction temperature.
  • The maximum allowed voltage transient for SQM50P06-15L_GE3 is not explicitly stated in the datasheet. However, as a general guideline, it is recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation.
  • Yes, SQM50P06-15L_GE3 can be used in a parallel configuration to increase current handling. However, it is essential to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended storage and handling procedure for SQM50P06-15L_GE3 is to store the devices in their original packaging, away from direct sunlight and moisture. It is also recommended to handle the devices by the body, rather than the leads, to prevent damage and electrostatic discharge.

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SQM50P06-15L_GE3 Overview

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