Part Image

SQM50P08-25L_GE3 - Vishay

Description: P-Channel 80 V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D2PAK)

Download SQM50P08-25L_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQM50P08-25L_GE3 - Vishay PCB footprint - Other - Other - TO-263 (D2PAK):3-LEAD
click to zoom
3D Models
SQM50P08-25L_GE3 - Vishay  - 3D model - Other - TO-263 (D2PAK):3-LEAD
click to zoom

SQM50P08-25L_GE3 Details

  • Manufacturer Part Number:

    SQM50P08-25L_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Germany

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    110 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    120 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQM50P08-25L_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQM50P08-25L_GE3 is a pad size of 1.5 mm x 1.5 mm with a 0.5 mm spacing between pads. However, it's recommended to consult the datasheet and application notes for specific guidance on PCB layout and design.
  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, ensure good thermal management, and consider using a heat sink if necessary. Additionally, consult the datasheet for specific temperature ratings and guidelines.
  • The maximum allowable voltage for SQM50P08-25L_GE3 is 25V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
  • Yes, SQM50P08-25L_GE3 is suitable for high-frequency applications up to 1 GHz. However, it's essential to consider the device's parasitic capacitance and inductance, as well as the PCB layout, to minimize signal degradation and ensure optimal performance.
  • To ensure ESD protection for SQM50P08-25L_GE3, follow proper handling and storage procedures, use ESD-protective packaging, and consider implementing ESD protection circuits in your design. Consult the datasheet and application notes for specific guidance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQM50P08-25L_GE3 Overview

Use the download button to access the SQM50P08-25L_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQM50, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQM50P08-25L_GE3

Showing 0 results