SQM85N15-19_GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SQM85N15-19_GE3 - Vishay PCB footprint - Other - Other - SQM85N15-19_GE3-1

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Datasheet Download Datasheet
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Part Number SQM85N15-19_GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - SQM85N15-19_GE3-1
Released Date May 6, 2022
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SQM85N15-19_GE3 Details

Manufacturer Part Number:
SQM85N15-19_GE3
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
Reach Compliance Code:
Compliant
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Avalanche Energy Rating (Eas):
135 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
150 V
Drain Current-Max (ID):
85 A
Drain-source On Resistance-Max:
0.019 Ω
FET Technology:
TRENCH MOSFET
Feedback Cap-Max (Crss):
270 pF
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Polarity/Channel Type:
N-CHANNEL
Pulsed Drain Current-Max (IDM):
140 A
Qualification Status:
Not Qualified
Reference Standard:
AEC-Q101
Surface Mount:
YES
Terminal Finish:
MATTE TIN
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Transistor Element Material:
SILICON
Turn-off Time-Max (toff):
70 ns
Turn-on Time-Max (ton):
62 ns

SQM85N15-19_GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SQM85N15-19_GE3 is a standard TO-220 package footprint with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 175°C, and provide adequate heat sinking and thermal management to prevent overheating.
The maximum allowed voltage transient for SQM85N15-19_GE3 is 20V, and it is recommended to use a voltage clamp or transient voltage suppressor to protect the device from voltage spikes and transients.
Yes, SQM85N15-19_GE3 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are matched in terms of electrical characteristics and thermal performance to prevent uneven current sharing and thermal runaway.
The recommended gate drive voltage for SQM85N15-19_GE3 is 10V to 15V, and it is recommended to use a gate driver with a high current capability to ensure fast switching times and low power losses.

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