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SQP50N06-09L_GE3 - Vishay

Description: MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified

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PCB Footprints
SQP50N06-09L_GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220A
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3D Models
SQP50N06-09L_GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220A
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SQP50N06-09L_GE3 Details

  • Manufacturer Part Number:

    SQP50N06-09L_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    115 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQP50N06-09L_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SQP50N06-09L_GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of ≤ 10°C/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K should be used between the device and heat sink.
  • The maximum allowed voltage transient for the SQP50N06-09L_GE3 is ± 50 V for a duration of ≤ 100 ns, with a maximum repetition rate of 100 kHz.
  • Yes, the SQP50N06-09L_GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductances and capacitances.
  • To protect the SQP50N06-09L_GE3 from ESD, handle the device with an ESD wrist strap or mat, and ensure that the PCB and assembly process follow ESD-safe practices. Additionally, consider adding ESD protection devices, such as TVS diodes, to the circuit.

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SQP50N06-09L_GE3 Overview

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