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SQP50P03-07_GE3 - Vishay

Description: MOSFET P-Channel 30V AEC-Q101 Qualified

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PCB Footprints
SQP50P03-07_GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - MC000125
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3D Models
SQP50P03-07_GE3 - Vishay  - 3D model - Transistor Outline, Vertical - MC000125
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SQP50P03-07_GE3 Details

  • Manufacturer Part Number:

    SQP50P03-07_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks, 4 Days

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Element Material:

    SILICON

SQP50P03-07_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQP50P03-07_GE3 is a pad size of 2.5mm x 1.5mm with a 0.5mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure the reliability of SQP50P03-07_GE3 in high-temperature applications, it's crucial to follow the recommended derating curves, ensure proper thermal management, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • The maximum safe operating area (SOA) for SQP50P03-07_GE3 is defined by the boundaries of voltage, current, and power dissipation. The device can operate safely within the boundaries of 50V, 30A, and 50W. Exceeding these limits can lead to device failure or reduced lifespan.
  • Yes, SQP50P03-07_GE3 can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses. Additionally, consider using a gate driver with a high current capability to ensure proper switching.
  • To protect SQP50P03-07_GE3 from electrostatic discharge (ESD), it's essential to follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or leads, and use ESD-safe packaging materials during transportation and storage.

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SQP50P03-07_GE3 Overview

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