SQS411ENW-T1_GE3 - Vishay

SQS411ENW-T1_GE3 Details

• Manufacturer Part Number:

  SQS411ENW-T1_GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Factory Lead Time:

  15 Weeks

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  18 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  40 V

• Drain Current-Max (ID):

  16 A

• Drain-source On Resistance-Max:

  0.0273 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  187 pF

• JESD-30 Code:

  S-PDSO-F8

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  39.5 W

• Pulsed Drain Current-Max (IDM):

  64 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  YES

• Terminal Finish:

  TIN

• Terminal Form:

  FLAT

• Terminal Position:

  DUAL

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  59.9 ns

• Turn-on Time-Max (ton):

  17.6 ns