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SQS482EN-T1_GE3 - Vishay

Description: MOSFET 30V 16A 62W AEC-Q101 Qualified

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SQS482EN-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK 1212-8 Single
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SQS482EN-T1_GE3 - Vishay  - 3D model - Other - PowerPAK 1212-8 Single
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SQS482EN-T1_GE3 Details

  • Manufacturer Part Number:

    SQS482EN-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    240

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    101 ns

  • Turn-on Time-Max (ton):

    43 ns

SQS482EN-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SQS482EN-T1_GE3 is a rectangular pad with a size of 2.5 mm x 1.25 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Also, consider using a heat sink or a thermal management system to keep the junction temperature below 150°C.
  • The maximum allowable voltage for SQS482EN-T1_GE3 is 480 V, which is the maximum repetitive peak voltage. However, it's recommended to operate the device within the specified voltage range to ensure reliable operation.
  • Yes, SQS482EN-T1_GE3 is suitable for high-frequency applications up to 1 MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing the circuit to ensure optimal performance.
  • To ensure reliability in a humid environment, follow proper storage and handling procedures, and consider using a conformal coating or potting compound to protect the device from moisture. Also, ensure the device is operated within the specified temperature and humidity range.

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SQS482EN-T1_GE3 Overview

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