Part Image

SQS482ENW-T1_GE3 - Vishay

Description: MOSFET 30V Vds -/+20V Vgs PowerPAK 1212-8W

Download SQS482ENW-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQS482ENW-T1_GE3 - Vishay PCB footprint - Other - Other - PowerPAK® -1212-8 Single
click to zoom
3D Models
SQS482ENW-T1_GE3 - Vishay  - 3D model - Other - PowerPAK® -1212-8 Single
click to zoom

SQS482ENW-T1_GE3 Details

  • Manufacturer Part Number:

    SQS482ENW-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    48 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    101 ns

  • Turn-on Time-Max (ton):

    43 ns

SQS482ENW-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB land pattern for SQS482ENW-T1_GE3 can be found in the Vishay Intertechnologies' application note AN42181, which provides detailed guidelines for PCB layout and assembly.
  • To ensure proper thermal management, it's recommended to provide a thermal pad on the PCB, use a thermal interface material (TIM) between the device and the heat sink, and ensure good airflow around the component. Refer to the datasheet for thermal resistance values and thermal management guidelines.
  • The maximum operating temperature range for SQS482ENW-T1_GE3 is -55°C to +175°C, as specified in the datasheet. However, it's essential to consider the derating curves and thermal management guidelines to ensure reliable operation within this range.
  • While SQS482ENW-T1_GE3 is a high-quality component, it's essential to consult with Vishay Intertechnologies' sales team or application engineers to determine its suitability for high-reliability or aerospace applications. They can provide guidance on the component's qualification, testing, and certification for such applications.
  • Follow the recommended soldering profile and assembly guidelines provided in the datasheet and Vishay Intertechnologies' application notes. Ensure that the PCB is designed with adequate clearance and thermal relief, and that the component is handled and stored according to the manufacturer's recommendations.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQS482ENW-T1_GE3 Overview

Use the download button to access the SQS482ENW-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQS48, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQS482ENW-T1_GE3

Showing 0 results