Part Image

SQS944ENW-T1_GE3 - Vishay

Description: Mosfet Array 2 N-Channel (Dual) 40V 6A (Tc) 27.8W (Tc) Surface Mount, Wettable Flank PowerPAK® 1212-8W Dual

Download SQS944ENW-T1_GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SQS944ENW-T1_GE3 - Vishay PCB footprint - Other - Other - SQS944ENW-T1_GE3-5
click to zoom
3D Models
SQS944ENW-T1_GE3 - Vishay  - 3D model - Other - SQS944ENW-T1_GE3-5
click to zoom

SQS944ENW-T1_GE3 Details

  • Manufacturer Part Number:

    SQS944ENW-T1_GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    13.5 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.034 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    28.5 ns

  • Turn-on Time-Max (ton):

    12.7 ns

SQS944ENW-T1_GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB land pattern for the SQS944ENW-T1_GE3 can be found in the Vishay Intertechnologies' application note AN42171, which provides detailed guidelines for PCB layout and assembly.
  • The SQS944ENW-T1_GE3 has a thermal resistance of 2.5°C/W. To ensure proper thermal management, it's recommended to use a heat sink with a thermal interface material, and to follow the guidelines outlined in the Vishay Intertechnologies' application note AN10226.
  • The maximum surge current rating for the SQS944ENW-T1_GE3 is 100 A for 10 ms. However, it's recommended to consult the datasheet and application notes for specific guidance on surge current handling.
  • Yes, the SQS944ENW-T1_GE3 is compatible with lead-free soldering processes. Vishay Intertechnologies has qualified the device for use with lead-free soldering processes, and it meets the requirements of the RoHS directive.
  • The SQS944ENW-T1_GE3 should be stored in a dry, cool place, away from direct sunlight and moisture. It's recommended to follow the guidelines outlined in the Vishay Intertechnologies' application note AN10016 for storage and handling of semiconductor devices.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SQS944ENW-T1_GE3 Overview

Use the download button to access the SQS944ENW-T1_GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SQS94, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SQS944ENW-T1_GE3

Showing 0 results