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SSM3J120TU(TE85L) - Toshiba

Description: P-Channel MOSFET, 2 A, 20 V, 3-Pin UFM Toshiba SSM3J120TU(TE85L)

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SSM3J120TU(TE85L) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-2U1A
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SSM3J120TU(TE85L) - Toshiba  - 3D model - SO Transistor Flat Lead - 2-2U1A
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SSM3J120TU(TE85L) Details

  • Manufacturer Part Number:

    SSM3J120TU(TE85L)

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    4 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Surface Mount:

    YES

SSM3J120TU(TE85L) Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow the recommended operating conditions and derating guidelines.
  • The maximum allowable power dissipation is 125W, but this can be derated based on the operating temperature and other factors. Refer to the datasheet for detailed derating information.
  • Yes, the SSM3J120TU(TE85L) is qualified to AEC-Q101 standards and is suitable for high-reliability and automotive applications. However, additional testing and validation may be required.
  • Follow proper ESD handling procedures, use ESD-protective packaging and storage, and consider adding external ESD protection devices if necessary.

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