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SSM3J130TU,LF - Toshiba

Description: MOSFET Small-signal FET 24.8 nC -4.4A -20V

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SSM3J130TU,LF - Toshiba PCB footprint - Other - Other - UFM (2-2U1A)
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SSM3J130TU,LF Details

  • Manufacturer Part Number:

    SSM3J130TU,LF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.4 A

  • Drain-source On Resistance-Max:

    0.031 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    190 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.8 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J130TU,LF Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for SSM3J130TU,LF is 1.65V to 3.6V.
  • Toshiba recommends using ESD protection devices, such as TVS diodes or ESD arrays, to protect the SSM3J130TU,LF from electrostatic discharge.
  • The maximum power dissipation for SSM3J130TU,LF is 150mW.
  • Yes, SSM3J130TU,LF is rated for operation up to 125°C, making it suitable for high-temperature applications.
  • Toshiba recommends using moisture-resistant packaging and following proper storage and handling procedures to prevent moisture-related failures.

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