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SSM3J168F - Toshiba

Description: P-ch MOSFET, -60 V, -0.4 A, 1.55 Ω@10V, SOT-346(S-Mini)

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SSM3J168F - Toshiba PCB footprint - Other - Other - 2-3F1S
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SSM3J168F - Toshiba  - 3D model - Other - 2-3F1S
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SSM3J168F Details

  • Manufacturer Part Number:

    SSM3J168F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-346, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Date Of Intro:

    2016-12-15

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    1.55 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.5 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.6 W

  • Pulsed Drain Current-Max (IDM):

    0.8 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM3J168F Overview

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Part Image SSM3J168F,LF(T Toshiba America Electronic Components

Power Field-Effect Transistor, 0.4A I(D), 60V, 1.55ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET