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SSM3J328R,LF - Toshiba

Description: MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS

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SSM3J328R,LF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-23F (2-3Z1A)
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SSM3J328R,LF - Toshiba  - 3D model - SO Transistor Flat Lead - SOT-23F (2-3Z1A)
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SSM3J328R,LF Details

  • Manufacturer Part Number:

    SSM3J328R,LF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23F, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.0298 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    99 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J328R,LF Frequently Asked Questions (FAQs)

  • The recommended land pattern for SSM3J328R,LF is a rectangular pad with a size of 1.5mm x 0.8mm, with a 0.3mm radius corner. The pad should be centered on the component and have a non-solder mask defined (NSMD) pad shape.
  • To handle thermal considerations for SSM3J328R,LF, ensure good thermal conduction by using a thermal pad or a heat sink, and keep the component away from heat sources. The maximum junction temperature is 150°C, and the thermal resistance is 25°C/W.
  • The SSM3J328R,LF has built-in ESD protection, with a human body model (HBM) rating of ±2kV and a charged device model (CDM) rating of ±500V.
  • Yes, the SSM3J328R,LF is suitable for high-frequency applications up to 100MHz. However, ensure that the layout and PCB design are optimized for high-frequency operation, and consider using a decoupling capacitor to reduce noise and ringing.
  • To ensure the reliability of SSM3J328R,LF in a harsh environment, follow proper storage and handling procedures, and ensure the component is operated within the recommended operating conditions. Also, consider using a conformal coating or potting compound to protect the component from moisture and contaminants.

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SSM3J328R,LF Overview

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Part Image SSM3J328R,LF(A Toshiba America Electronic Components

Power Field-Effect Transistor, 6A I(D), 20V, 0.0298ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SSM3J328R,LSONYF(A Toshiba America Electronic Components

Power Field-Effect Transistor, 6A I(D), 20V, 0.0298ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET