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SSM3J351R,LF - Toshiba

Description: MOSFET Small-signal MOSFET ID -3.5A, -60V VDSS

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SSM3J351R,LF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-23F (2-3Z1A)_1
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SSM3J351R,LF - Toshiba  - 3D model - SO Transistor Flat Lead - SOT-23F (2-3Z1A)_1
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SSM3J351R,LF Details

  • Manufacturer Part Number:

    SSM3J351R,LF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23F, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    8.9 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.184 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J351R,LF Frequently Asked Questions (FAQs)

  • The recommended land pattern for SSM3J351R,LF is a rectangular pad with a size of 1.5mm x 0.8mm, with a solder mask opening of 1.2mm x 0.5mm. The pad should be centered on the component and have a non-solder mask defined (NSMD) pad shape.
  • To handle thermal considerations for SSM3J351R,LF, ensure good thermal conductivity by using a thermal pad or a heat sink, and keep the component away from heat sources. The maximum junction temperature is 150°C, and the thermal resistance is 35°C/W.
  • The SSM3J351R,LF has an internal ESD protection diode, which provides a human body model (HBM) of 2kV and a machine model (MM) of 200V. However, it is still recommended to follow proper ESD handling procedures when handling the component.
  • Yes, the SSM3J351R,LF is suitable for high-frequency applications up to 3.5GHz. However, it is essential to follow proper PCB design and layout guidelines to minimize signal loss and ensure signal integrity.
  • The recommended storage condition for SSM3J351R,LF is in a dry, cool place with a temperature range of -20°C to 40°C and humidity below 60%. Avoid exposing the component to direct sunlight, moisture, or extreme temperatures.

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SSM3J351R,LF Overview

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