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SSM3J351R - Toshiba

Description: P-ch MOSFET, -60 V, -3.5 A, 0.134 Ω@10V, SOT-23F

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SSM3J351R - Toshiba PCB footprint - Other - Other - 2-3Z1S
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SSM3J351R - Toshiba  - 3D model - Other - 2-3Z1S
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SSM3J351R Details

  • Manufacturer Part Number:

    SSM3J351R

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23F, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    8.9 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.184 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J351R Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a solid ground plane, short and wide traces for the input and output pins, and a decoupling capacitor (e.g., 100nF) between the VCC and GND pins to reduce noise and ensure stable operation.
  • To ensure linear operation, the SSM3J351R requires a bias voltage (VCC) between 2.7V and 5.5V, and the input voltage (VIN) should be within the common-mode input voltage range (VCM) specified in the datasheet. Additionally, the output voltage (VOUT) should be within the output voltage swing range.
  • The maximum power dissipation of the SSM3J351R is 250mW. To ensure reliable operation, the device should be operated within the recommended operating conditions, and the junction temperature (TJ) should be kept below 150°C.
  • The SSM3J351R is rated for operation up to 125°C. However, the device's performance and reliability may degrade at high temperatures. If operation above 125°C is required, consult with Toshiba's application engineers for guidance on derating and thermal management.
  • The SSM3J351R has built-in ESD protection, but it's still important to follow proper handling and storage procedures to prevent ESD damage. Use an anti-static wrist strap, mat, or packaging materials, and avoid touching the device's pins or exposed internal components.

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