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SSM3J35CTC - Toshiba

Description: P-ch MOSFET, -20 V, -0.25 A, 1.4 Ω@4.5V, CST3C

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SSM3J35CTC - Toshiba PCB footprint - Other - Other - 2-1W1A
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SSM3J35CTC - Toshiba  - 3D model - Other - 2-1W1A
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SSM3J35CTC Details

  • Manufacturer Part Number:

    SSM3J35CTC

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2016-02-12

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.85

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.25 A

  • Drain-source On Resistance-Max:

    2.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JESD-30 Code:

    R-XBCC-N3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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