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SSM3J374R,LXHF - Toshiba

Description: MOSFET SMOS P-ch Vdss:-30V Vgss:-20/+10V Id:-4A

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SSM3J374R,LXHF - Toshiba PCB footprint - Other - Other - SSM3J374R,LXHF-1
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SSM3J374R,LXHF - Toshiba  - 3D model - Other - SSM3J374R,LXHF-1
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SSM3J374R,LXHF Details

  • Manufacturer Part Number:

    SSM3J374R,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23F, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.071 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    40 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J374R,LXHF Frequently Asked Questions (FAQs)

  • Toshiba provides a recommended PCB layout in their application note, which includes guidelines for component placement, trace routing, and thermal management to ensure optimal performance and minimize electromagnetic interference (EMI).
  • The SSM3J374R,LXHF has a high power dissipation, so thermal management is crucial. Toshiba recommends using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB should be designed to dissipate heat efficiently.
  • While the datasheet specifies an operating temperature range of -40°C to 125°C, Toshiba recommends derating the device's power dissipation above 85°C to ensure reliable operation and prevent thermal runaway.
  • Toshiba recommends following good EMC design practices, such as using a metal shield around the device, keeping sensitive analog circuits away from the device, and using EMI filters on the input and output lines. Additionally, the device should be placed in a shielded enclosure to minimize radiation.
  • Toshiba recommends storing the device in a dry, cool place, away from direct sunlight and moisture. The device should be handled with anti-static precautions, such as using an anti-static wrist strap or mat, to prevent electrostatic discharge (ESD) damage.

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