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SSM3J375F,LXHF - Toshiba

Description: MOSFET P Channel -20V -2A AECQ MOSFET

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SSM3J375F,LXHF - Toshiba PCB footprint - Other - Other - 2-3F1S
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SSM3J375F,LXHF - Toshiba  - 3D model - Other - 2-3F1S
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SSM3J375F,LXHF Details

  • Manufacturer Part Number:

    SSM3J375F,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.15

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.15 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    32 pF

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.6 W

  • Pulsed Drain Current-Max (IDM):

    4 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3J375F,LXHF Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a solid ground plane, short and wide traces for the input and output pins, and a decoupling capacitor (e.g., 10nF) between the input pin and ground to reduce noise and ensure stability.
  • To ensure reliability in high-temperature applications, follow proper derating guidelines, use a heat sink if necessary, and ensure good thermal conductivity between the device and the PCB. Also, consider using a thermally conductive adhesive or thermal interface material to improve heat dissipation.
  • The maximum allowable power dissipation for the SSM3J375F is 1.5W. However, this value can be derated based on the ambient temperature and the thermal resistance of the device and PCB. Refer to the datasheet for more information on power dissipation and thermal characteristics.
  • Yes, the SSM3J375F can be used in switching regulator applications. However, it's essential to ensure that the device is operated within its safe operating area (SOA) and that the switching frequency is within the recommended range (typically < 1MHz). Additionally, consider using a snubber circuit to reduce voltage spikes and ringing.
  • To protect the SSM3J375F from ESD, follow proper handling and storage procedures, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. Additionally, consider using ESD protection devices, such as TVS diodes, in the circuit design.

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SSM3J375F,LXHF Overview

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