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SSM3J66MFV,L3F - Toshiba

Description: Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-0.8A, RDS(ON)=0.39Ohm @ 4.5V, in VESM package

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SSM3J66MFV,L3F - Toshiba PCB footprint - Other - Other - SSM3J66MFV,L3F-3
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3D Models
SSM3J66MFV,L3F - Toshiba  - 3D model - Other - SSM3J66MFV,L3F-3
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SSM3J66MFV,L3F Details

  • Manufacturer Part Number:

    SSM3J66MFV,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

SSM3J66MFV,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Toshiba recommends derating the maximum junction temperature (Tj) by 5°C for every 1000m above sea level. Additionally, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • The maximum allowable power dissipation is dependent on the ambient temperature and the thermal design. Toshiba recommends following the power derating curve in the datasheet to ensure reliable operation.
  • Yes, the SSM3J66MFV,L3F is qualified to AEC-Q101 standards, making it suitable for automotive and high-reliability applications. However, additional testing and validation may be required depending on the specific application.
  • Toshiba recommends following standard ESD handling procedures, including using an ESD wrist strap or mat, and storing the devices in anti-static packaging. The device has an internal ESD protection diode, but external protection measures are still necessary.

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SSM3J66MFV,L3F Overview

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