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SSM3K2615R,LF(B - Toshiba

Description: N-Channel 60 V 2A (Ta) 1W (Ta) Surface Mount SOT-23F

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SSM3K2615R,LF(B - Toshiba PCB footprint - Other - Other - 2-3Z1S-2026-5
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SSM3K2615R,LF(B - Toshiba  - 3D model - Other - 2-3Z1S-2026-5
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SSM3K2615R,LF(B Details

  • Manufacturer Part Number:

    SSM3K2615R,LF(B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    0.44 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3K2615R,LF(B Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the SSM3K2615R,LF is -40°C to 125°C.
  • To ensure reliability, follow the recommended derating guidelines for voltage and current, and consider using thermal management techniques such as heat sinks or thermal interfaces.
  • The maximum allowable power dissipation for the SSM3K2615R,LF is 1.5 W, and it's essential to follow the recommended thermal management guidelines to prevent overheating.
  • Yes, the SSM3K2615R,LF is suitable for switching regulator applications due to its low voltage drop and high current capability. However, ensure that the device is properly biased and the switching frequency is within the recommended range.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures, use ESD-protective equipment, and consider adding external ESD protection devices to the circuit.

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