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SSM3K35MFV(TPL3) - Toshiba

Description: SSM3K35MFV(TPL3) N-Channel MOSFET, 180 mA, 20 V SSM3, 3-Pin VESM Toshiba

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SSM3K35MFV(TPL3) - Toshiba - PCB symbol
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PCB Footprints
SSM3K35MFV(TPL3) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-723_a
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3D Models
SSM3K35MFV(TPL3) - Toshiba - 3D model - SO Transistor Flat Lead - SOT-723_a
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SSM3K35MFV(TPL3) Details

  • Manufacturer Part Number:

    SSM3K35MFV(TPL3)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    0.18 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

SSM3K35MFV(TPL3) Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern is recommended for optimal thermal performance.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to ensure a stable input voltage.
  • The maximum allowed power dissipation for this device is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • Yes, the SSM3K35MFV(TPL3) is designed for high-reliability applications. It has undergone rigorous testing and meets the requirements for automotive and industrial applications.
  • ESD protection is critical for this device. Handling the device by the body or using an ESD wrist strap is recommended. Anti-static packaging and storage is also recommended.

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SSM3K35MFV(TPL3) Overview

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