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SSM3K376R,LXHF - Toshiba

Description: MOSFET SMOS Low RON Nch Id: 4A Vdss: 30V Pd:1W

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SSM3K376R,LXHF - Toshiba - PCB symbol
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PCB Footprints
SSM3K376R,LXHF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SOT-23F_2022
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3D Models
SSM3K376R,LXHF - Toshiba - 3D model - SO Transistor Flat Lead - SOT-23F_2022
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SSM3K376R,LXHF Details

  • Manufacturer Part Number:

    SSM3K376R,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23F, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3K376R,LXHF Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive interface material, and follow the recommended derating curves for voltage and current. Also, consider using a thermal sensor to monitor the device temperature.
  • The maximum allowed voltage transient for the SSM3K376R,LXHF is ±500mV. Exceeding this may cause damage to the device or affect its reliability.
  • Yes, but ensure that the device is properly sealed and conformal coated to prevent moisture ingress. Also, follow the recommended storage and handling procedures to prevent moisture absorption.
  • Toshiba recommends a soldering profile with a peak temperature of 260°C, a dwell time of 10-30 seconds, and a cooling rate of 3-5°C/s. Ensure that the device is not exposed to temperatures above 280°C.

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SSM3K376R,LXHF Overview

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