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SSM3K56MFV,L3F(B - Toshiba

Description: Power MOSFET, N Channel, 20 V, 800 mA, 235 Milliohms, SOT-723, 3 Pins, Surface Mount

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SSM3K56MFV,L3F(B - Toshiba PCB footprint - Other - Other - 1-1Q1S/2-1L1S_2025
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SSM3K56MFV,L3F(B - Toshiba  - 3D model - Other - 1-1Q1S/2-1L1S_2025
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SSM3K56MFV,L3F(B Details

  • Manufacturer Part Number:

    SSM3K56MFV,L3F(B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.8 A

  • Drain-source On Resistance-Max:

    0.235 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JESD-30 Code:

    R-PDSO-F3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM3K56MFV,L3F(B Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the SSM3K56MFV,L3F(B is -40°C to 125°C.
  • The power-up sequence for the SSM3K56MFV,L3F(B should follow the recommended sequence in the datasheet: VCC, then VREF, and finally VIN. This ensures proper device operation and prevents damage.
  • The maximum allowed voltage on the VIN pin is 36V. Exceeding this voltage may damage the device.
  • Yes, the SSM3K56MFV,L3F(B is suitable for high-reliability and automotive applications due to its high-quality manufacturing process and rigorous testing. However, it's essential to consult with Toshiba's application engineers to ensure the device meets the specific requirements of your application.
  • To ensure EMC with the SSM3K56MFV,L3F(B, follow proper PCB design guidelines, use adequate shielding, and implement filtering and decoupling techniques as recommended in the datasheet and application notes.

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SSM3K56MFV,L3F(B Overview

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