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SSM3K7002KFU - Toshiba

Description: N-ch MOSFET, 60 V, 0.4 A, 1.5 Ω@10V, SOT-323(USM)

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PCB Footprints
SSM3K7002KFU - Toshiba PCB footprint - Other - Other - 1-2P1S-1
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3D Models
SSM3K7002KFU - Toshiba  - 3D model - Other - 1-2P1S-1
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SSM3K7002KFU Details

  • Manufacturer Part Number:

    SSM3K7002KFU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Date Of Intro:

    2016-02-12

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    1.75 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM3K7002KFU Overview

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Image Part Number Model
Part Image T2N7002BK,LM Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 0.4A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET