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SSM6J216FE - Toshiba

Description: SSM6J216FE

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PCB Footprints
SSM6J216FE - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - ES6
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3D Models
SSM6J216FE - Toshiba  - 3D model - SO Transistor Flat Lead - ES6
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SSM6J216FE Details

  • Manufacturer Part Number:

    SSM6J216FE

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7.07

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    4.8 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1040 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.75 W

  • Power Dissipation-Max (Abs):

    0.75 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM6J216FE Overview

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Part Image SSM6J216FE(TPL3) Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 4.8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET