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SSM6J501NU,LF(B - Toshiba

Description: Small Low ON resistance MOSFETs

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SSM6J501NU,LF(B - Toshiba PCB footprint - Other - Other - UDFN6B
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SSM6J501NU,LF(B - Toshiba  - 3D model - Other - UDFN6B
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SSM6J501NU,LF(B Details

  • Manufacturer Part Number:

    SSM6J501NU,LF(B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    280 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    30 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6J501NU,LF(B Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow proper thermal design and layout guidelines, and to derate the device's power dissipation according to the ambient temperature. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • Toshiba recommends soldering this device using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds. Hand soldering is not recommended due to the device's small size and high pin count.
  • Yes, the SSM6J501NU,LF(B is qualified for automotive and high-reliability applications. However, it's essential to follow Toshiba's specific guidelines and requirements for these applications, including additional testing and validation procedures.
  • To prevent electrostatic discharge (ESD) damage, handle the device with an ESD wrist strap or mat, and ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, on the input and output pins.

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SSM6J501NU,LF(B Overview

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