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SSM6J771G - Toshiba

Description: P-ch MOSFET, -20 V, -5.0 A, 0.035 Ω@4.5V, WCSP6C

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PCB Footprints
SSM6J771G - Toshiba PCB footprint - BGA - BGA - WCSP6C
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3D Models
SSM6J771G - Toshiba  - 3D model - BGA - WCSP6C
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SSM6J771G Details

  • Manufacturer Part Number:

    SSM6J771G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JESD-30 Code:

    R-PBGA-B6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Form:

    BALL

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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