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SSM6K513NU,LF - Toshiba

Description: MOSFET Small Low ON Resistane MOSFETs

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SSM6K513NU,LF - Toshiba PCB footprint - Other - Other - SSM6K513NU,LF-4
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SSM6K513NU,LF - Toshiba  - 3D model - Other - SSM6K513NU,LF-4
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SSM6K513NU,LF Details

  • Manufacturer Part Number:

    SSM6K513NU,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-1220, UDFN6B, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    37.6 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JESD-30 Code:

    S-PDSO-N6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.25 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6K513NU,LF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to dissipate heat efficiently.
  • Monitor the device's voltage, current, and temperature to ensure they are within the specified limits. Use a thermal management system to prevent overheating, and implement overcurrent protection to prevent damage from excessive current.
  • Handle the device by the body or pins, avoid touching the leads, and use an anti-static wrist strap or mat. Store the device in an anti-static bag or wrap it in anti-static material.
  • Yes, the device is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 ohms and 100 ohms. Consult the datasheet and application notes for more information.

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SSM6K513NU,LF Overview

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