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SSM6K810R,LXHF - Toshiba

Description: Silicon N-channel MOS (U-MOS -H)

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SSM6K810R,LXHF - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - SSM6K810R,LXHF
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SSM6K810R,LXHF - Toshiba  - 3D model - SO Transistor Flat Lead - SSM6K810R,LXHF
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SSM6K810R,LXHF Details

  • Manufacturer Part Number:

    SSM6K810R,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TSOP6F, 6 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    21.4 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.069 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.5 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6K810R,LXHF Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves, ensure good thermal design, and consider using a heat sink or thermal interface material.
  • Although not explicitly stated in the datasheet, Toshiba recommends limiting voltage transients to ±10% of the rated voltage to prevent damage or malfunction.
  • Yes, the SSM6K810R,LXHF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation.
  • Toshiba recommends following standard ESD handling procedures, such as using an ESD wrist strap or mat, and storing the devices in anti-static packaging. The device itself has some ESD protection built-in, but additional external protection may be necessary depending on the application.

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SSM6K810R,LXHF Overview

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