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SSM6L807R - Toshiba

Description: N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

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PCB Footprints
SSM6L807R - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-3AC1A-2
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3D Models
SSM6L807R - Toshiba  - 3D model - SO Transistor Flat Lead - 2-3AC1A-2
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SSM6L807R Details

  • Manufacturer Part Number:

    SSM6L807R

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2019-02-05

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    5

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.0391 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM6L807R Overview

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