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SSM6N09FU - Toshiba

Description: N-ch x 2 MOSFET, 30 V, 0.4 A, 0.7 Ω@10V, SOT-363(US6)

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PCB Footprints
SSM6N09FU - Toshiba PCB footprint - Other - Other - 1-2T1S_2-2J1S
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3D Models
SSM6N09FU - Toshiba  - 3D model - Other - 1-2T1S_2-2J1S
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SSM6N09FU Details

  • Manufacturer Part Number:

    SSM6N09FU

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    3

  • Configuration:

    SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    1.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PDSO-G6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Pulsed Drain Current-Max (IDM):

    0.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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SSM6N09FU Overview

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