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SSM6N15AFE,LM - Toshiba

Description: MOSFET 30V VDSS 20V VGSS N-Ch 150mW PD

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PCB Footprints
SSM6N15AFE,LM - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-2N1D
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3D Models
SSM6N15AFE,LM - Toshiba  - 3D model - SO Transistor Flat Lead - 2-2N1D
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SSM6N15AFE,LM Details

  • Manufacturer Part Number:

    SSM6N15AFE,LM

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

SSM6N15AFE,LM Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are recommended for optimal thermal performance.
  • Ensure the gate-source voltage (Vgs) is within the recommended range (typically -2V to 2V) and the drain-source voltage (Vds) is within the absolute maximum rating (typically 150V).
  • Handle the device by the body, avoid touching the leads or die. Store the device in a dry, cool place, away from direct sunlight and moisture. Use anti-static packaging and handling procedures to prevent ESD damage.
  • Calculate the thermal resistance (Rth) required based on the device's power dissipation and maximum junction temperature. Select a heat sink with a thermal resistance that meets or exceeds the calculated value.
  • The SSM6N15AFE,LM meets the quality and reliability standards of AEC-Q101, ensuring high reliability and robustness in automotive and industrial applications.

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SSM6N15AFE,LM Overview

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