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SSM6N62TU,LXHF - Toshiba

Description: MOSFET SMOS Low RON Dual Nc h Id:0.8A, Vdss: 20

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SSM6N62TU,LXHF - Toshiba - PCB symbol
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PCB Footprints
SSM6N62TU,LXHF - Toshiba PCB footprint - Other - Other - SSM6N62TU,LXHF-4
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SSM6N62TU,LXHF - Toshiba - 3D model - Other - SSM6N62TU,LXHF-4
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SSM6N62TU,LXHF Details

  • Manufacturer Part Number:

    SSM6N62TU,LXHF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    36 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.8 A

  • Drain-source On Resistance-Max:

    0.098 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JESD-30 Code:

    R-PDSO-F6

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.5 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SSM6N62TU,LXHF Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, derate the device's power dissipation according to the temperature derating curve in the datasheet.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage.
  • Yes, the SSM6N62TU,LXHF is suitable for high-frequency switching applications up to 1MHz. However, ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation. Ensure that the device is stored in an anti-static bag or tube during transportation and storage.

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