SSM6N813R - Toshiba

SSM6N813R Details

• Manufacturer Part Number:

  SSM6N813R

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  TSOP6F, 6 PIN

• ECCN Code:

  EAR99

• Factory Lead Time:

  36 Weeks

• Manufacturer:

  Toshiba America Electronic Components

• YTEOL:

  6

• Avalanche Energy Rating (Eas):

  7.6 mJ

• Configuration:

  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  3.5 A

• Drain-source On Resistance-Max:

  0.112 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  7 pF

• JESD-30 Code:

  R-PDSO-F6

• Number of Elements:

  2

• Number of Terminals:

  6

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  NOT SPECIFIED

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  1.5 W

• Pulsed Drain Current-Max (IDM):

  7 A

• Surface Mount:

  YES

• Terminal Form:

  FLAT

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  NOT SPECIFIED

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON