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SSM6P41FE(TE85L,F) - Toshiba

Description: Toshiba SSM6P41FE(TE85L,F) Dual P-channel MOSFET Transistor, -0.72 A, -20 V, 6-Pin ES

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SSM6P41FE(TE85L,F) - Toshiba - PCB symbol
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PCB Footprints
SSM6P41FE(TE85L,F) - Toshiba PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2-2N1D
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3D Models
SSM6P41FE(TE85L,F) - Toshiba - 3D model - SO Transistor Flat Lead - 2-2N1D
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SSM6P41FE(TE85L,F) Details

  • Manufacturer Part Number:

    SSM6P41FE(TE85L,F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • Drain Current-Max (ID):

    0.72 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    30

SSM6P41FE(TE85L,F) Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to stabilize the input voltage.
  • The maximum SOA is defined by the voltage and current ratings specified in the datasheet. Operating the device beyond these ratings can lead to premature failure or damage.
  • Handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind, such as using ESD diodes or resistors.
  • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, not the leads, to prevent damage.

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SSM6P41FE(TE85L,F) Overview

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