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STB12N60DM2AG - STMicroelectronics

Description: Automotive-grade N-channel 600 V, 380 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a D²PAK package

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STB12N60DM2AG - STMicroelectronics PCB footprint - Other - Other - STB12N60DM2AG-2
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STB12N60DM2AG Details

  • Manufacturer Part Number:

    STB12N60DM2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.43 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.7 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

STB12N60DM2AG Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for STB12N60DM2AG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure safe operation.
  • The junction-to-case thermal resistance (RthJC) for STB12N60DM2AG is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet (RthJA and RthJC_top) and the device's package dimensions. A rough estimate can be obtained using the following formula: RthJC ≈ RthJA - RthJC_top.
  • The recommended gate drive voltage for STB12N60DM2AG is not explicitly stated in the datasheet. However, as a general rule, it's recommended to use a gate drive voltage between 10V to 15V to ensure proper switching and minimize power losses.
  • Yes, STB12N60DM2AG is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation at high frequencies.
  • The body diode of STB12N60DM2AG is not optimized for high-frequency switching. To minimize the impact of the body diode, it's recommended to use a fast-recovery diode (FRD) or a Schottky diode in parallel with the MOSFET to reduce the reverse recovery time and minimize power losses.

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STB12N60DM2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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