STB24N65M2 footprint, schematic symbol and 3D model by STMicroelectronics

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STB24N65M2 - STMicroelectronics PCB footprint - Other - Other - STB24N65M2-1

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Part Number STB24N65M2
Manufacturer STMicroelectronics
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - STB24N65M2-1
Released Date Sep 1, 2022
Last Modified Date Jan 8, 2026 2:31 PM UTC
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STB24N65M2 Details

Manufacturer Part Number:
STB24N65M2
Brand Name:
STMicroelectronics
Rohs Code:
Yes
Part Life Cycle Code:
Active
Package Description:
TO-263, D2PAK-3/2 PIN
Country Of Origin:
Mainland China
ECCN Code:
EAR99
Factory Lead Time:
14 Weeks
Manufacturer:
STMicroelectronics
YTEOL:
5
Avalanche Energy Rating (Eas):
650 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
650 V
Drain Current-Max (ID):
16 A
Drain-source On Resistance-Max:
0.23 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-263AB
JESD-30 Code:
R-PSSO-G2
Number of Elements:
1
Number of Terminals:
2
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
150 W
Pulsed Drain Current-Max (IDM):
64 A
Surface Mount:
YES
Terminal Form:
GULL WING
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

STB24N65M2 Frequently Asked Questions (FAQs)

The maximum junction temperature (Tj) for the STB24N65M2 is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
To calculate the power dissipation of the STB24N65M2, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
The recommended gate drive voltage for the STB24N65M2 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching frequency.
Yes, the STB24N65M2 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate drive circuitry to ensure reliable operation.
To protect the STB24N65M2 from overvoltage and overcurrent, you can use a combination of voltage regulators, overvoltage protection (OVP) circuits, and overcurrent protection (OCP) circuits. Additionally, you can also use a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent detection.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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